Anti-ambipolar transport and logic operation in two-dimensional field-effect transistors using in-series integration of GeAs and SnS2, APPLIED PHYSICS LETTERS , 제124권(집) , PP.123104~ , 2024.03.19

GeAs as an emerging p-type van der Waals semiconductor and its application in p-n photodiodes, NANOTECHNOLOGY , 제34권(집) , 제31호 , 2023.07.30

Unusual stacking sequence of MoS2 and WS2 vertical heterostructures in one-pot chemical vapor deposition growth, JOURNAL OF THE KOREAN PHYSICAL SOCIETY , 제82권(집) , 제1호 , PP.57~67 , 2023.01.01

Tuning positive and negative transconductance in multilayer MoS2 with Indium contacts, Physical Review Applied , 제18권(집) , 제1호 , 2022.07.27

Metal-insulator transition in two-dimensional transition metal dichalcogenides, Emergent Materials , 제4권(집) , 제4호 , PP.989~998 , 2021.08.01

Quantum critical scaling for finite-temperature Mott-like metal-insulator crossover in few-layered MoS2, PHYSICAL REVIEW B , 제102권(집) , 제24호 , PP.245424~ , 2020.12.24

Coulomb drag transistor using a graphene and MoS2 heterostructure, Communications Physics , 제3권(집) , 제1호 , 2020.12.01

Thickness effect on low-power driving of MoS2 transistors in balanced double-gate fields, NANOTECHNOLOGY , 제31권(집) , 제25호 , 2020.04.03

Temperature dependence of velocity saturation in a multilayer MoS2 transistors, SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 제35권(집) , 제3호 , 2020.03.01

Hot electron effects and electric field scaling near metal-insulator transition in multilayer MoS2, PHYSICAL REVIEW B , 제101권(집) , 제3호 , 2020.01.24

Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors, ACS Nano , 제13권(집) , 제11호 , PP.13169~13175 , 2019.11.26

Anomalous Conductance near Percolative Metal-Insulator Transition in Monolayer MoS2 at Low Voltage Regime, ACS Nano , 제13권(집) , 제6호 , PP.6631~6637 , 2019.06.25

Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2, Nature Communications , 제9권(집) , 2018.05.24

Role of Alkali Metal Promoter in Enhancing Lateral Growth of Monolayer Transition Metal Dichalcogenides, NANOTECHNOLOGY , 제28권(집) , 제36호 , 2017.09.08

Junction-Structure-Dependent Schottky Barrier Inhomogenenity and Device Ideality of Monolayer MoS2 Field Effect Transistors, ACS Applied Materials & Interfaces , 제9권(집) , 제12호 , PP.11240~11246 , 2017.03.29

Thickness-dependent in-plane thermal conductivity of suspended MoS2 grown by chemical vapor deposition, Nanoscale , 제9권(집) , 제7호 , PP.2541~2547 , 2017.02.21

Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer, ACS Applied Materials & Interfaces , 제9권(집) , 제5호 , PP.5006~5013 , 2017.02.08

Photocurrent switching of monolayer MoS2 using metal-insulator transition, NANO LETTERS , 제17권(집) , 제2호 , PP.673~678 , 2017.02.08

Electron Excess Doping and Effective Schottky Barrier Reduction on MoS2-BN Heterostructure, NANO LETTERS , 제16권(집) , 제10호 , PP.6383~6389 , 2016.10.01

Absorption dichroism of monolayer 1T '-MoTe2 in visible range, 2D Materials , 제3권(집) , 제3호 , PP.31010~ , 2016.09.08

Electrical Transport Properties of Polymorphic MoS2, ACS Nano , 제10권(집) , 제8호 , PP.7500~7506 , 2016.08.23

Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics, ACS Applied Materials & Interfaces , 제8권(집) , 제29호 , PP.19092~19099 , 2016.07.27

Sensitive photo-thermal response of graphene oxide for mid-infrared detection, Nanoscale , 제7권(집) , 제38호 , PP.15695~15700 , 2015.08.25

Microwave pinning modes near Landau filling nu=1 in two-dimensional electron systems with alloy disorder, PHYSICAL REVIEW B , 제92권(집) , 제3호 , PP.35121~ , 2015.07.09